The Study of Single Wall Carbon Nanonets Grown on Oxide / Silicon Substrate by Low Pressure Thermal CVD

• Main Authors: Ti-Ui,Yeh, 葉帝佑
• Other Authors: Tsung-Chieh,Cheng
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/21204583064207506352

碩士 === 國立高雄應用科技大學 === 機械與精密工程研究所 === 98 === This research successfully synthesized high-quality single-walled carbon nanonets by low pressure thermal CVD. Using the Immersion method to make different proportions of acetic acid cobalt and molybdenum acetate evenly adsorb on the silicon wafer, and then explore their differences. We use field emission gun scanning electron microscopy, four-point probe and the BTS electrical measurement system to measure the density of carbon nanonets. The results show that, when acetate cobalt and molybdenum acetate have higher concentration, the carbon nanonets have higher density When the change in the thickness of silicon dioxide, the results showed that the more thickness, the higher density of carbon nanonets. Using the CARO acid-wash carbon nanonets of 0.08 wt% and 0.1 wt% respectively to found that the resistance values decreased significantly in the thickness of 10000Å. By the Raman spectroscopy we can know the graphitization ratio that we use CARO to acid-wash carbon nanonets before and after raised to 0.88 from 0.80 in the concentration of 0.08 wt%. And the graphitization ratio raised to 0.90 from. 0.86 in the concentration of 0.1wt%