Study on ZnO:Al:Ga films by radio frequency magnetron sputtering
碩士 === 龍華科技大學 === 工程技術研究所 === 98 === Zinc oxide is receiving considerable attention due to its broad range of applications as transparent conductive oxide in electrodes and solar cells. Transparent conductive oxide thin films are characterized by their low specific electrical-resistance and high tra...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41843128750837203494 |
| Summary: | 碩士 === 龍華科技大學 === 工程技術研究所 === 98 === Zinc oxide is receiving considerable attention due to its broad range of applications as transparent conductive oxide in electrodes and solar cells. Transparent conductive oxide thin films are characterized by their low specific electrical-resistance and high transparency in the visible range. This study presents an effective methodology for the aluminum and gallium-doped zinc oxide (AGZO) thin films were deposited on glass substrates using radio frequency magnetron sputtering. The methodology combines the use of the grey relational analysis method and Taguchi method to obtain a good multiple deposition qualities in the coating process and to optimization of coating parameters for radio frequency magnetron sputtering. Four coating parameters are discussed including deposition rate, electrical resistivity and optical transmittance based on Grey-based Taguchi method. Structural features and surface morphology are studied by X-ray diffraction, scanning electron microscopy and atomic force microscopy analyses. With the Grey-based Taguchi method, the electrical resistivity is 4.65×10-3 Ω-cm and high average transmittance above 88% in the visible rang. The effects of post-annealing treatment on properties of AGZO thin films were also investigated. The annealing treatment can reduce the electrical resistivity and increase the optical transmittance for AGZO thin films.
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