InGaN-based Light-Emitting Diodes with Hexagonal Inverted Pyramid Structures Through Laser Scribing and Chemical Etching Processes
碩士 === 國立中興大學 === 材料科學與工程學系所 === 98 === The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-ace GaN surface were fabricated through a crystallographic etching process to increase light extraction efficiency. After laser decomposition, laser scribing, and a later...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55523082852487246105 |