Microwave-induced DC current in an InN nanowire device in magnetic fields

• Main Authors: You-Deng Lin, 林酉燈
• Other Authors: 孫允武
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/88710581854224081206

碩士 === 國立中興大學 === 物理學系所 === 98 === We report on the microwave-induced current in an InN nanowire (NW) device in magnetic fields (B) at 1.4 K. The InN NW has a diameter of about 200nm, and Pt electrodes defined by focus ion beam (FIB). At frequencies ranging from few hundred MHz to 24 GHz, we observed a significant microwave-induced DC current through the device. This current also exhibits an oscillatory behavior in B with a period of about 1 T. The oscillating part has an anti-symmetry dependence with respect to the reversal of B, indicating that it is related to a process with broken time-reversal symmetry. We also examined the power dependence of the current signal and found that the induced current is proportional to the microwave power, following the theoretical prediction for a mesoscopic diffusive-transport junction.