Study on GaN Light Emitting Diodes with Imbeded Electrodes
碩士 === 國立中興大學 === 精密工程學系所 === 98 === Textured n-GaN side up LED with interdigitated imbedded electrodes (IIE) eliminating the electrode-shading loss with high reflection mirror on silicon substrate and double-side roughening both p-GaN and undoped-GaN layers have been investigated. The devices ar...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27893743342506275485 |