Analysis ans Simulation for Silicon Nanowire Biosensors

碩士 === 國立交通大學 === 電子工程系所 === 98 === This thesis provides a comprehensive simulation framework for silicon nanowire (Si-NW) biosensors. Using this simulation framework, we have systematically investigated the impact of device design on the sensitivity of Si-NW biosensors. In addition, we have examine...

Full description

Bibliographic Details
Main Authors: Lu,Kun-Yen, 呂昆諺
Other Authors: Su, Pin
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/78022223936419794090
id ndltd-TW-098NCTU5428026
record_format oai_dc
spelling ndltd-TW-098NCTU54280262015-10-13T15:42:34Z http://ndltd.ncl.edu.tw/handle/78022223936419794090 Analysis ans Simulation for Silicon Nanowire Biosensors 矽奈米線生物感測器之分析與模擬 Lu,Kun-Yen 呂昆諺 碩士 國立交通大學 電子工程系所 98 This thesis provides a comprehensive simulation framework for silicon nanowire (Si-NW) biosensors. Using this simulation framework, we have systematically investigated the impact of device design on the sensitivity of Si-NW biosensors. In addition, we have examined the impacts of intrinsic parameter fluctuations such as random dopant fluctuations (RDF) and line-edge roughness (LER). Our study indicates that Si-NW biosensors with smaller diameter, shorter channel length, and lower channel doping have better sensitivity and less sensitivity variation. When diameter is smaller than ~10nm, the quantum effect further enhances the sensitivity. Regarding the suppression of screening effects, our simulations indicate that the electro-diffusion flow can significantly suppress the screening effects in the electrolyte solution, and Si-NW biosensors with lower channel doping and smaller diameter have more enhancements in the sensitivity, especially for the accumulation mode. Besides, the structure of Si-NW biosensor with antenna has been simulated and analyzed. Su, Pin 蘇彬 2009 學位論文 ; thesis 102 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 電子工程系所 === 98 === This thesis provides a comprehensive simulation framework for silicon nanowire (Si-NW) biosensors. Using this simulation framework, we have systematically investigated the impact of device design on the sensitivity of Si-NW biosensors. In addition, we have examined the impacts of intrinsic parameter fluctuations such as random dopant fluctuations (RDF) and line-edge roughness (LER). Our study indicates that Si-NW biosensors with smaller diameter, shorter channel length, and lower channel doping have better sensitivity and less sensitivity variation. When diameter is smaller than ~10nm, the quantum effect further enhances the sensitivity. Regarding the suppression of screening effects, our simulations indicate that the electro-diffusion flow can significantly suppress the screening effects in the electrolyte solution, and Si-NW biosensors with lower channel doping and smaller diameter have more enhancements in the sensitivity, especially for the accumulation mode. Besides, the structure of Si-NW biosensor with antenna has been simulated and analyzed.
author2 Su, Pin
author_facet Su, Pin
Lu,Kun-Yen
呂昆諺
author Lu,Kun-Yen
呂昆諺
spellingShingle Lu,Kun-Yen
呂昆諺
Analysis ans Simulation for Silicon Nanowire Biosensors
author_sort Lu,Kun-Yen
title Analysis ans Simulation for Silicon Nanowire Biosensors
title_short Analysis ans Simulation for Silicon Nanowire Biosensors
title_full Analysis ans Simulation for Silicon Nanowire Biosensors
title_fullStr Analysis ans Simulation for Silicon Nanowire Biosensors
title_full_unstemmed Analysis ans Simulation for Silicon Nanowire Biosensors
title_sort analysis ans simulation for silicon nanowire biosensors
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/78022223936419794090
work_keys_str_mv AT lukunyen analysisanssimulationforsiliconnanowirebiosensors
AT lǚkūnyàn analysisanssimulationforsiliconnanowirebiosensors
AT lukunyen xìnàimǐxiànshēngwùgǎncèqìzhīfēnxīyǔmónǐ
AT lǚkūnyàn xìnàimǐxiànshēngwùgǎncèqìzhīfēnxīyǔmónǐ
_version_ 1717768567350362112