Process and Technology For Low Voltage MONOS Non-Volatile Memory
碩士 === 國立交通大學 === 電子研究所 === 98 === Recently, the Flash memory is commonly used in portable electronic products, such as cell phone, MP3 player and USB Flash. However, with the increase in requirements for products, the technology and process must be still improved. The key issue for poly-Si floa...
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ndltd-TW-098NCTU54281522016-04-18T04:21:48Z http://ndltd.ncl.edu.tw/handle/74689600010490016741 Process and Technology For Low Voltage MONOS Non-Volatile Memory 具有低電壓之金屬-氧化層-氮化層-氧化層-矽結構非揮發性記憶體之製程技術應用與研究 Lee, Tsung-Han 李宗翰 碩士 國立交通大學 電子研究所 98 Recently, the Flash memory is commonly used in portable electronic products, such as cell phone, MP3 player and USB Flash. However, with the increase in requirements for products, the technology and process must be still improved. The key issue for poly-Si floating gate non-volatile memory is the electrically conductive charge storage layer, where the programmed electrons will leak out through the single oxide defect. Such oxide defects are generated by the program and erase stress operation. In order to maintain the data retention, the thick tunnel oxide (6-7 nm) is required. That is opposite to the VLSI scaling trend. In addition, the memory device with thick tunnel oxide requires a higher operation voltage. To overcome this problem, the conductive poly-Si is replaced by discrete trapping nitride to form the [poly-Si or metal gate]-SiO2-Si3N4-SiO2-Si SONOS or MONOS memory. The isolated charges stored in discrete traps can prevent complete charge leakage. Therefore, a thinner tunnel oxide can be used. This in turn yields lower voltage and faster speed for program and erase. In this dissertation, we demonstrated a low voltage, fast speed and good data retention MONOS memory device with high work function MoN metal gate, novel interactive high-k?nHfO2-ZrO2 structure for trapping layer substituted conventional Si3N4 trapping layer. Chin, Albert 荊鳳德 2010 學位論文 ; thesis 59 en_US |
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碩士 === 國立交通大學 === 電子研究所 === 98 === Recently, the Flash memory is commonly used in portable electronic products, such as cell phone, MP3 player and USB Flash. However, with the increase in requirements for products, the technology and process must be still improved.
The key issue for poly-Si floating gate non-volatile memory is the electrically conductive charge storage layer, where the programmed electrons will leak out through the single oxide defect. Such oxide defects are generated by the program and erase stress operation. In order to maintain the data retention, the thick tunnel oxide (6-7 nm) is required. That is opposite to the VLSI scaling trend. In addition, the memory device with thick tunnel oxide requires a higher operation voltage. To overcome this problem, the conductive poly-Si is replaced by discrete trapping nitride to form the [poly-Si or metal gate]-SiO2-Si3N4-SiO2-Si SONOS or MONOS memory. The isolated charges stored in discrete traps can prevent complete charge leakage. Therefore, a thinner tunnel oxide can be used. This in turn yields lower voltage and faster speed for program and erase.
In this dissertation, we demonstrated a low voltage, fast speed and good data retention MONOS memory device with high work function MoN metal gate, novel interactive high-k?nHfO2-ZrO2 structure for trapping layer substituted conventional Si3N4 trapping layer.
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author2 |
Chin, Albert |
author_facet |
Chin, Albert Lee, Tsung-Han 李宗翰 |
author |
Lee, Tsung-Han 李宗翰 |
spellingShingle |
Lee, Tsung-Han 李宗翰 Process and Technology For Low Voltage MONOS Non-Volatile Memory |
author_sort |
Lee, Tsung-Han |
title |
Process and Technology For Low Voltage MONOS Non-Volatile Memory |
title_short |
Process and Technology For Low Voltage MONOS Non-Volatile Memory |
title_full |
Process and Technology For Low Voltage MONOS Non-Volatile Memory |
title_fullStr |
Process and Technology For Low Voltage MONOS Non-Volatile Memory |
title_full_unstemmed |
Process and Technology For Low Voltage MONOS Non-Volatile Memory |
title_sort |
process and technology for low voltage monos non-volatile memory |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/74689600010490016741 |
work_keys_str_mv |
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