Study of Process Effects and Bias Stress Stability on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor
碩士 === 國立交通大學 === 光電工程學系 === 98 === In this study, a complete experiment is performed to verify the origin of bias stress induced instability and a fabrication procedure is recommended to attain a stable amorphous In-Ga-Zn-O TFT (a-IGZO TFT). Three treatment phases, including as-deposited, post-anne...
Main Authors: | Lo, Shih-yi, 羅世益 |
---|---|
Other Authors: | Zan, Hsiao-Wen |
Format: | Others |
Language: | en_US |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/21051820567668045641 |
Similar Items
-
Study of Process Effects and Bias Stress Stability on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor
by: Lo, Shih-yi, et al.
Published: (2010) -
High Mobility and Enhanced Reliability Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
by: Chieh Lo, et al.
Published: (2016) -
Study of Environment Effects and Bias Illumination Stability for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
by: Li, Iue-Hen, et al.
Published: (2011) -
Study on Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
by: Tsung-Te Lin, et al.
Published: (2011) -
Stabilization of Amorphous Indium-Gallium-Zinc Oxide Thin Film Transistors by a Passivation Layer
by: Chen, Yung-Tsai, et al.
Published: (2010)