Thermal crystallization behavior of hydrogenated amorphous silicon grown by electron cyclotron resonance chemical vapor deposition
碩士 === 國立中央大學 === 材料科學與工程研究所 === 98 === Hydrogenated amorphous silicon (a-Si:H) thin films were deposited on pre-oxidized Si wafers at low-temperature by electron cyclotron resonance chemical vapor deposition (ECRCVD). The furnace annealing treatment by solid-phase crystallization (SPC) method were...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24915229709238999852 |