Tunneling current and thermoelectric effects in a single molecular transistor with strong electron phonon interactions
碩士 === 國立中央大學 === 電機工程研究所 === 98 === This thesis theoretically studies the tunneling current, electrical conductance, thermal power, electron thermal conductance and figure of merit of a single molecular quantum dot by using the Anderson model with strong coupling between molecular vibration modes a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59187799165745790544 |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 98 === This thesis theoretically studies the tunneling current, electrical conductance, thermal power, electron thermal conductance and figure of merit of a single molecular quantum dot by using the Anderson model with strong coupling between molecular vibration modes and localized electron [or “electron-phonon interactions ”(EPIs)]. Due to strong EPIs, the phonon side bands of tunneling current and thermal power are observed at low temperature, but readily washed out with increasing temperature. In the absence of EPIs, the figure of merit (ZT) of molecular QD junctions exhibits an impressive value in the Coulomb blockade regime .The seriously reduction of ZT is observed in the presence of strong EPIs. The suppression of ZT is mainly attributed to the considerable enhancement of electron thermal conductance due to the involve of multiple phonon assisted tunneling processes. We also find that Carnot efficiency vanishes in the strong EPIs. We can resolve the high-order phonon assisted tunneling processes by using measurement of thermal power.
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