Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction

Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction

碩士 === 國立中央大學 === 電機工程研究所 === 98 === This thesis studies the fabrication and tunneling spectroscopy of Ge QD single hole transistors (SHTs) realized in FinFET technology. The Ge QD is generated by oxidizing a SiGe nanocavity, which is separated from the adjacent electrodes by Si3N4 spacers. Thermall...

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Main Authors: Sin-hong Chou, 周信宏
Other Authors: Pei-wen Li
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/71320395420916126664
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spelling ndltd-TW-098NCU054420852016-04-20T04:18:00Z http://ndltd.ncl.edu.tw/handle/71320395420916126664 Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction 利用氮化矽作為穿隧接面之鍺量子點單電洞電晶體之製作與特性分析 Sin-hong Chou 周信宏 碩士 國立中央大學 電機工程研究所 98 This thesis studies the fabrication and tunneling spectroscopy of Ge QD single hole transistors (SHTs) realized in FinFET technology. The Ge QD is generated by oxidizing a SiGe nanocavity, which is separated from the adjacent electrodes by Si3N4 spacers. Thermally oxidizing SiGe in the nanotrench produces single Ge QD in the center with symmetrical tunneling junctions of Ge QD SHTs. Such devices exhibit clear Coulomb oscillation and staircase in room temperature. Pei-wen Li 李佩雯 2010 學位論文 ; thesis 88 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中央大學 === 電機工程研究所 === 98 === This thesis studies the fabrication and tunneling spectroscopy of Ge QD single hole transistors (SHTs) realized in FinFET technology. The Ge QD is generated by oxidizing a SiGe nanocavity, which is separated from the adjacent electrodes by Si3N4 spacers. Thermally oxidizing SiGe in the nanotrench produces single Ge QD in the center with symmetrical tunneling junctions of Ge QD SHTs. Such devices exhibit clear Coulomb oscillation and staircase in room temperature.
author2 Pei-wen Li
author_facet Pei-wen Li
Sin-hong Chou
周信宏
author Sin-hong Chou
周信宏
spellingShingle Sin-hong Chou
周信宏
Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction
author_sort Sin-hong Chou
title Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction
title_short Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction
title_full Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction
title_fullStr Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction
title_full_unstemmed Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction
title_sort fabrication and electrical characterization of germanium qd single hole transistor with si3n4 tunnel junction
publishDate 2010
url http://ndltd.ncl.edu.tw/handle/71320395420916126664
work_keys_str_mv AT sinhongchou fabricationandelectricalcharacterizationofgermaniumqdsingleholetransistorwithsi3n4tunneljunction
AT zhōuxìnhóng fabricationandelectricalcharacterizationofgermaniumqdsingleholetransistorwithsi3n4tunneljunction
AT sinhongchou lìyòngdànhuàxìzuòwèichuānsuìjiēmiànzhīduǒliàngzidiǎndāndiàndòngdiànjīngtǐzhīzhìzuòyǔtèxìngfēnxī
AT zhōuxìnhóng lìyòngdànhuàxìzuòwèichuānsuìjiēmiànzhīduǒliàngzidiǎndāndiàndòngdiànjīngtǐzhīzhìzuòyǔtèxìngfēnxī
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