Fabrication and electrical characterization of Germanium QD Single Hole Transistor with Si3N4 tunnel junction
碩士 === 國立中央大學 === 電機工程研究所 === 98 === This thesis studies the fabrication and tunneling spectroscopy of Ge QD single hole transistors (SHTs) realized in FinFET technology. The Ge QD is generated by oxidizing a SiGe nanocavity, which is separated from the adjacent electrodes by Si3N4 spacers. Thermall...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71320395420916126664 |