A Study of Temperature Sensor

• Main Authors: Houn-Hsin Chen, 陳鴻鑫
• Other Authors: Shu-Chung Yi
• Format: Others
• Language: en_US
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/44130560150981694477

碩士 === 國立彰化師範大學 === 積體電路設計研究所 === 98 === This paper presents two low-power smart temperature sensors. These sensors consist of a PTAT circuit, and a ring oscillator. Smart temperature element can be implemented by the proposed sensor. The PTAT circuit makes use of the subthreshold characteristics. The current of the PTAT circuit is used to drive the ring oscillator. The first sensor was fabricated by the TSMC CMOS 0.35-μm 2P4M digital process. The core area is only 1005.59 μm2. The power consumption is about 129.15 nW. The temperature range is about 165℃. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.9947 during the temperature range. The second sensor was also fabricated by the TSMC CMOS 0.35-μm 2P4M digital process and TSMC CMOS 0.18-μm 1P6M digital process. The power consumption is about 22.5 μW. The temperature range is about 100℃. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.9913 during the temperature range. Because we propose the PTAT circuit does not need extra reference voltage and current source for produces bias. Therefore, the configuration of the sensor circuit is uncomplicated and the chip area could be obviously decreased.