Study on Photoelectrical Properties and Microstructures of Indium Tin Oxide Transparent Conducting Films Prepared by Sol-Gel Method

• Main Authors: Yu-Ming Peng, 彭昱銘
• Other Authors: Ru-Yung Yang
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/04395037644507402500

碩士 === 國立屏東科技大學 === 材料工程所 === 98 === In this study, the indium tin oxide solution was prepared by sol-gel method. The multi-layer indium tin oxide thin films were prepared by dip-coating and spin-coating method, and then annealing in vacuum, nitrogen, nitrogen and hydrogen gas mixture at different annealing temperature. In addition, the structural, optical and electrical properties of the indium tin oxide thin films are identified by energy dispersive spectrometer (EDS), Fourier transform infrared spectrometer (FTIR), X-Ray diffraction (XRD), cold field emission scanning electron microscope (FESEM), Atomic force microscope (AFM), UV-visible spectrophotometer, Hall measurement and etc. From the experimental results, the electrical properties of the indium tin oxide thin films prepared by sol-gel method were significantly depended on the annealing temperature and annealing atmosphere were change. The optimum value of resistivity is 1.1×10-2ohm-cm for the film prepared by spin-coating. The optimum optical transmission in the visible range of the indium tin oxide thin films prepared by dip-coating was 88.0%. However, the optical transmission in the visible range of indium tin oxide thin films prepared by spin-coating were poor, and the optimum value was 66.1 %.