Study on Photoelectrical Properties and Microstructures of Indium Tin Oxide Transparent Conducting Films Prepared by Sol-Gel Method
碩士 === 國立屏東科技大學 === 材料工程所 === 98 === In this study, the indium tin oxide solution was prepared by sol-gel method. The multi-layer indium tin oxide thin films were prepared by dip-coating and spin-coating method, and then annealing in vacuum, nitrogen, nitrogen and hydrogen gas mixture at different a...
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ndltd-TW-098NPUS51590022016-12-22T04:18:19Z http://ndltd.ncl.edu.tw/handle/04395037644507402500 Study on Photoelectrical Properties and Microstructures of Indium Tin Oxide Transparent Conducting Films Prepared by Sol-Gel Method 溶膠-凝膠法製備銦錫氧化物透明導電薄膜的光電特性與微結構之研究 Yu-Ming Peng 彭昱銘 碩士 國立屏東科技大學 材料工程所 98 In this study, the indium tin oxide solution was prepared by sol-gel method. The multi-layer indium tin oxide thin films were prepared by dip-coating and spin-coating method, and then annealing in vacuum, nitrogen, nitrogen and hydrogen gas mixture at different annealing temperature. In addition, the structural, optical and electrical properties of the indium tin oxide thin films are identified by energy dispersive spectrometer (EDS), Fourier transform infrared spectrometer (FTIR), X-Ray diffraction (XRD), cold field emission scanning electron microscope (FESEM), Atomic force microscope (AFM), UV-visible spectrophotometer, Hall measurement and etc. From the experimental results, the electrical properties of the indium tin oxide thin films prepared by sol-gel method were significantly depended on the annealing temperature and annealing atmosphere were change. The optimum value of resistivity is 1.1×10-2ohm-cm for the film prepared by spin-coating. The optimum optical transmission in the visible range of the indium tin oxide thin films prepared by dip-coating was 88.0%. However, the optical transmission in the visible range of indium tin oxide thin films prepared by spin-coating were poor, and the optimum value was 66.1 %. Ru-Yung Yang 楊茹媛 2010 學位論文 ; thesis 117 zh-TW |
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碩士 === 國立屏東科技大學 === 材料工程所 === 98 === In this study, the indium tin oxide solution was prepared by sol-gel method. The multi-layer indium tin oxide thin films were prepared by dip-coating and spin-coating method, and then annealing in vacuum, nitrogen, nitrogen and hydrogen gas mixture at different annealing temperature. In addition, the structural, optical and electrical properties of the indium tin oxide thin films are identified by energy dispersive spectrometer (EDS), Fourier transform infrared spectrometer (FTIR), X-Ray diffraction (XRD), cold field emission scanning electron microscope (FESEM), Atomic force microscope (AFM), UV-visible spectrophotometer, Hall measurement and etc.
From the experimental results, the electrical properties of the indium tin oxide thin films prepared by sol-gel method were significantly depended on the annealing temperature and annealing atmosphere were change. The optimum value of resistivity is 1.1×10-2ohm-cm for the film prepared by spin-coating. The optimum optical transmission in the visible range of the indium tin oxide thin films prepared by dip-coating was 88.0%. However, the optical transmission in the visible range of indium tin oxide thin films prepared by spin-coating were poor, and the optimum value was 66.1 %.
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author2 |
Ru-Yung Yang |
author_facet |
Ru-Yung Yang Yu-Ming Peng 彭昱銘 |
author |
Yu-Ming Peng 彭昱銘 |
spellingShingle |
Yu-Ming Peng 彭昱銘 Study on Photoelectrical Properties and Microstructures of Indium Tin Oxide Transparent Conducting Films Prepared by Sol-Gel Method |
author_sort |
Yu-Ming Peng |
title |
Study on Photoelectrical Properties and Microstructures of Indium Tin Oxide Transparent Conducting Films Prepared by Sol-Gel Method |
title_short |
Study on Photoelectrical Properties and Microstructures of Indium Tin Oxide Transparent Conducting Films Prepared by Sol-Gel Method |
title_full |
Study on Photoelectrical Properties and Microstructures of Indium Tin Oxide Transparent Conducting Films Prepared by Sol-Gel Method |
title_fullStr |
Study on Photoelectrical Properties and Microstructures of Indium Tin Oxide Transparent Conducting Films Prepared by Sol-Gel Method |
title_full_unstemmed |
Study on Photoelectrical Properties and Microstructures of Indium Tin Oxide Transparent Conducting Films Prepared by Sol-Gel Method |
title_sort |
study on photoelectrical properties and microstructures of indium tin oxide transparent conducting films prepared by sol-gel method |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/04395037644507402500 |
work_keys_str_mv |
AT yumingpeng studyonphotoelectricalpropertiesandmicrostructuresofindiumtinoxidetransparentconductingfilmspreparedbysolgelmethod AT péngyùmíng studyonphotoelectricalpropertiesandmicrostructuresofindiumtinoxidetransparentconductingfilmspreparedbysolgelmethod AT yumingpeng róngjiāoníngjiāofǎzhìbèiyīnxīyǎnghuàwùtòumíngdǎodiànbáomódeguāngdiàntèxìngyǔwēijiégòuzhīyánjiū AT péngyùmíng róngjiāoníngjiāofǎzhìbèiyīnxīyǎnghuàwùtòumíngdǎodiànbáomódeguāngdiàntèxìngyǔwēijiégòuzhīyánjiū |
_version_ |
1718403898147864576 |