Growth of 3C-SiC on Si(100) by low pressure chemical vapor deposition using a modified four-step process
博士 === 國立清華大學 === 材料科學工程學系 === 98 === 本篇論文係利用四階段成長法,在低壓化學氣相沉積系統成長無孔洞立方晶形碳化矽,並探討不同反應氣體(矽甲烷-丙烷-氫氣與矽甲烷-甲烷-氫氣)在矽基板上成長立方晶型碳化矽的差異。四階段成長法省略了傳統三階段成長法中降溫的步驟,並在碳化步驟後新增一擴散改質步驟。在矽甲烷-丙烷-氫氣反應氣體系統中,實驗結果顯示,碳化緩衝層經過30分鐘1350 oC的擴散改質之後,能有效地提升表面的碳矽鍵結生成。經由X光繞射及穿透式電子繞射分析結果指出,在改質後碳化緩衝層上能成長出無孔洞的高品質的立方晶型碳化矽薄膜。在電性方面,藉由霍爾效應量測可...
Main Authors: | Chen, Wei Yu, 陳威佑 |
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Other Authors: | Hwang, J. |
Format: | Others |
Language: | en_US |
Published: |
2010
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Online Access: | http://ndltd.ncl.edu.tw/handle/80653599813841142625 |
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