The Study of Low Voltage and Low Capacitance Transient Voltage Suppressor
博士 === 國立清華大學 === 電子工程研究所 === 98 === As complementary metal-oxide semiconductor (CMOS) technology progresses, the supply voltage drops from 5V and 3.3V to 2.5 V or even lower than.1.2 V for CMOS technology beyond the 90 nm technology node. The delicate transistors in modern integrated circuits (ICs)...
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ndltd-TW-098NTHU54280182016-04-25T04:27:13Z http://ndltd.ncl.edu.tw/handle/98411518137139548562 The Study of Low Voltage and Low Capacitance Transient Voltage Suppressor 低電壓暨低電容暫態電壓抑制器之研究 Dai, Sheng-Huei 戴聖輝 博士 國立清華大學 電子工程研究所 98 As complementary metal-oxide semiconductor (CMOS) technology progresses, the supply voltage drops from 5V and 3.3V to 2.5 V or even lower than.1.2 V for CMOS technology beyond the 90 nm technology node. The delicate transistors in modern integrated circuits (ICs) are becoming more sensitive to transient voltage stress or electrostatic discharge. Hence, the rating voltage of the corresponding protection device should be reduced to accommodate these changes. For power line protection, the leakage caused by band-to-band tunneling in low-voltage transient voltage suppressor (TVS) devices would be a major problem. For data line protection, one key feature is to maintain low capacitance of these TVS devices to prevent interference with the protected circuits. In this dissertation, there are two targets: the improvement on leakage for commercially available low-voltage TVS devices and the design of new TVS structure to effectively reduce the overall capacitance. A simple method of blanket-ion implantation is used to reduce leakage in low-voltage TVS. By adapting electric field enhancement structure, the breakdown voltage can be reduced and the relationship between the breakdown voltage and junction capacitance on conventional TVS diodes can be broken. A device with two junctions in series is another way to reduce the capacitance. Based on the current capability difference between forward and reverse biased diodes, an asymmetry structure is also used to further reduce the overall capacitance and increase the current handling capability of the two-junction device. King, Ya-Chin 金雅琴 2010 學位論文 ; thesis 135 en_US |
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博士 === 國立清華大學 === 電子工程研究所 === 98 === As complementary metal-oxide semiconductor (CMOS) technology progresses, the supply voltage drops from 5V and 3.3V to 2.5 V or even lower than.1.2 V for CMOS technology beyond the 90 nm technology node. The delicate transistors in modern integrated circuits (ICs) are becoming more sensitive to transient voltage stress or electrostatic discharge. Hence, the rating voltage of the corresponding protection device should be reduced to accommodate these changes.
For power line protection, the leakage caused by band-to-band tunneling in low-voltage transient voltage suppressor (TVS) devices would be a major problem. For data line protection, one key feature is to maintain low capacitance of these TVS devices to prevent interference with the protected circuits.
In this dissertation, there are two targets: the improvement on leakage for commercially available low-voltage TVS devices and the design of new TVS structure to effectively reduce the overall capacitance. A simple method of blanket-ion implantation is used to reduce leakage in low-voltage TVS. By adapting electric field enhancement structure, the breakdown voltage can be reduced and the relationship between the breakdown voltage and junction capacitance on conventional TVS diodes can be broken. A device with two junctions in series is another way to reduce the capacitance. Based on the current capability difference between forward and reverse biased diodes, an asymmetry structure is also used to further reduce the overall capacitance and increase the current handling capability of the two-junction device.
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author2 |
King, Ya-Chin |
author_facet |
King, Ya-Chin Dai, Sheng-Huei 戴聖輝 |
author |
Dai, Sheng-Huei 戴聖輝 |
spellingShingle |
Dai, Sheng-Huei 戴聖輝 The Study of Low Voltage and Low Capacitance Transient Voltage Suppressor |
author_sort |
Dai, Sheng-Huei |
title |
The Study of Low Voltage and Low Capacitance Transient Voltage Suppressor |
title_short |
The Study of Low Voltage and Low Capacitance Transient Voltage Suppressor |
title_full |
The Study of Low Voltage and Low Capacitance Transient Voltage Suppressor |
title_fullStr |
The Study of Low Voltage and Low Capacitance Transient Voltage Suppressor |
title_full_unstemmed |
The Study of Low Voltage and Low Capacitance Transient Voltage Suppressor |
title_sort |
study of low voltage and low capacitance transient voltage suppressor |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/98411518137139548562 |
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