The study of nano structured c-Si solar cell

• Main Authors: Tsung-ying Tsai, 蔡綜穎
• Other Authors: Cheng-Liang Hsu
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/67990589495790449345

碩士 === 國立臺南大學 === 光電工程研究所 === 98 === In this thesis, we used different textured structure to enhance the efficiency of solar cell. It includes fabrication of silicon nanowires by electroless etching method and growth zinc oxide nanowires by hydrothermal method on crystalline solar cell. In fabrication of silicon nanowires, we studied and improved some process for solar cell application. In process, we used different silver nitrate concentration, hydrofluoric acid concentration, dipping time and solution temperature to obtain silicon nanowires with different length. In anti-reflection coating, we used optical measurement to measure reflection. We found the reflection was 2 % even less when the wavelength was from 300 to 800 nm. So, it’s effective to lower the reflection of longer wavelength. Silicon nanowires with different length was used to fabricate solar cell. If the lengths too long the contact don’t cap well, so we choose nanwires about 4 μm to make solar cell. Presently, the sample area is 2×2 cm2, and the length of silicon nanowires is 4 μm,and the efficiency is 5.67%, and the fill factor is 64.85%, and rhe open circuit voltage is 0.5 V and the short circuit current is 48 mA. And then, by the improvement of this process, we change the front contact to Cr and made silicon nanowires etching on the silicon bulks without contact. We found the efficiency were enhances from 5.67% to 8.15%. Finally, we grew zinc oxide nanowires by hydrothermal method. We mixed zinc nitrate and hexamine solution and changed different growth time to produce the zinc oxide nanowires which had different lengths that in order to improve the efficiency. Presently, the sample area is 2×2 cm2, and the length of silicon nanowires is 10 μm, and the efficiency is 12.5%, and the fill factor is 63.62%, and the open circuit voltage is 0.58 V and the short circuit current is 126 mA.