The study of nano structured c-Si solar cell
碩士 === 國立臺南大學 === 光電工程研究所 === 98 === In this thesis, we used different textured structure to enhance the efficiency of solar cell. It includes fabrication of silicon nanowires by electroless etching method and growth zinc oxide nanowires by hydrothermal method on crystalline solar cell. In fabricati...
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ndltd-TW-098NTNT51240012017-09-03T04:24:41Z http://ndltd.ncl.edu.tw/handle/67990589495790449345 The study of nano structured c-Si solar cell 奈米結構結晶矽太陽能電池之研究 Tsung-ying Tsai 蔡綜穎 碩士 國立臺南大學 光電工程研究所 98 In this thesis, we used different textured structure to enhance the efficiency of solar cell. It includes fabrication of silicon nanowires by electroless etching method and growth zinc oxide nanowires by hydrothermal method on crystalline solar cell. In fabrication of silicon nanowires, we studied and improved some process for solar cell application. In process, we used different silver nitrate concentration, hydrofluoric acid concentration, dipping time and solution temperature to obtain silicon nanowires with different length. In anti-reflection coating, we used optical measurement to measure reflection. We found the reflection was 2 % even less when the wavelength was from 300 to 800 nm. So, it’s effective to lower the reflection of longer wavelength. Silicon nanowires with different length was used to fabricate solar cell. If the lengths too long the contact don’t cap well, so we choose nanwires about 4 μm to make solar cell. Presently, the sample area is 2×2 cm2, and the length of silicon nanowires is 4 μm,and the efficiency is 5.67%, and the fill factor is 64.85%, and rhe open circuit voltage is 0.5 V and the short circuit current is 48 mA. And then, by the improvement of this process, we change the front contact to Cr and made silicon nanowires etching on the silicon bulks without contact. We found the efficiency were enhances from 5.67% to 8.15%. Finally, we grew zinc oxide nanowires by hydrothermal method. We mixed zinc nitrate and hexamine solution and changed different growth time to produce the zinc oxide nanowires which had different lengths that in order to improve the efficiency. Presently, the sample area is 2×2 cm2, and the length of silicon nanowires is 10 μm, and the efficiency is 12.5%, and the fill factor is 63.62%, and the open circuit voltage is 0.58 V and the short circuit current is 126 mA. Cheng-Liang Hsu 許正良 2010 學位論文 ; thesis 61 zh-TW |
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碩士 === 國立臺南大學 === 光電工程研究所 === 98 === In this thesis, we used different textured structure to enhance the efficiency of solar cell. It includes fabrication of silicon nanowires by electroless etching method and growth zinc oxide nanowires by hydrothermal method on crystalline solar cell.
In fabrication of silicon nanowires, we studied and improved some process for solar cell application. In process, we used different silver nitrate concentration,
hydrofluoric acid concentration, dipping time and solution temperature to obtain silicon nanowires with different length. In anti-reflection coating, we used optical measurement to measure reflection. We found the reflection was 2 % even less when the wavelength was from 300 to 800 nm. So, it’s effective to lower the reflection of longer wavelength. Silicon nanowires with different length was used to fabricate solar cell. If the lengths too long the contact don’t cap well, so we choose nanwires about 4 μm to make solar cell. Presently, the sample area is 2×2 cm2, and the length of silicon nanowires is 4 μm,and the efficiency is 5.67%, and the fill factor is 64.85%, and rhe open circuit voltage is 0.5 V and the short circuit current is 48 mA.
And then, by the improvement of this process, we change the front contact to Cr and made silicon nanowires etching on the silicon bulks without contact. We found the efficiency were enhances from 5.67% to 8.15%.
Finally, we grew zinc oxide nanowires by hydrothermal method. We mixed zinc nitrate and hexamine solution and changed different growth time to produce the zinc oxide nanowires which had different lengths that in order to improve the efficiency. Presently, the sample area is 2×2 cm2, and the length of silicon nanowires is 10 μm, and
the efficiency is 12.5%, and the fill factor is 63.62%, and the open circuit voltage is 0.58 V and the short circuit current is 126 mA.
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author2 |
Cheng-Liang Hsu |
author_facet |
Cheng-Liang Hsu Tsung-ying Tsai 蔡綜穎 |
author |
Tsung-ying Tsai 蔡綜穎 |
spellingShingle |
Tsung-ying Tsai 蔡綜穎 The study of nano structured c-Si solar cell |
author_sort |
Tsung-ying Tsai |
title |
The study of nano structured c-Si solar cell |
title_short |
The study of nano structured c-Si solar cell |
title_full |
The study of nano structured c-Si solar cell |
title_fullStr |
The study of nano structured c-Si solar cell |
title_full_unstemmed |
The study of nano structured c-Si solar cell |
title_sort |
study of nano structured c-si solar cell |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/67990589495790449345 |
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