| Summary: | 碩士 === 國立臺南大學 === 材料科學系碩士班 === 98 === This study is concerned with CuInGaSe2 (CIGS) single target, it is deposited CIGS thin film by using RF sputtering method, then studying of CIGS thin-film characteristic and its analysis. So the setting of sputtering recipe will influence the characteristic of CIGS thin film after deposited process. The main three variable factors which is controlled in power, pressure, temperature . In accordance with these factors we can analyse with the crystallization of the thin film, the ratio of composition, the variation of energy-gap and the deposition rate.
From the factors of deposited CIGS thin film that we can learn about : take under 200℃ in the sill, it is at 8 mtorr pressure and 100W power at the time it can deposite better crystallization, and near-stoichiometric (1:0.7:0.3:2) within the reasonable range. It’s conductivity type is P-type by Hall-effect measurement, the Carrier Density is 10-16~10-17, Mobility is 1-10(cm2/VS) .The experimental results are accord with absorber layer properties in CIGS thin film solar cell.
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