Fabrication of flexible transparent p-n heterojunction by RF sputtering

• Main Authors: Chu-Te Chi, 戚居德
• Other Authors: I-Chun Cheng
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/26723107584760951924

碩士 === 臺灣大學 === 光電工程學研究所 === 98 === This thesis reports the deposition of n⁺AZO, n-ZnO, i-ZnO, n-MgxZn1-xO and p-CuAlO2 transparent conducting thin films by RF sputtering and the fabrication of transparent p-n hetero-junction thin film diode without additional heat treatment. Both commercial ITO coated glass and PET are used as substrates. Four device structures are studied here: (1) n⁺AZO/p-CuAlO2/ITO, (2) n⁺AZO/n-ZnO/p-CuAlO2/ITO, (3) n⁺AZO/n-MgxZn1-xO/p-CuAlO2/ITO, (4) n⁺AZO/i-ZnO/p-CuAlO2/ITO. The I-V characteristics and UV responsivity of the thin film diodes with p-layer, n-layer and i- layer of different thickness are compared. In the n⁺AZO/p-CuAlO2/ITO p-n⁺ hetero-junction series, the thickness of p-type is varied: =100, 200, 300nm and the thickness of n⁺-type is varied as: =100, 200, 300nm. The turn-on voltage is about 0.8V. The breakdown voltage increases with the increase of the p-layer thickness while is independent of the n⁺-layer thickness. The on -glass p-n⁺ hetero-junction ( =300nm, =200nm) shows a rectify ratio of at ±4V and UV responsivity of A/W at -6V. In the n⁺AZO/n-ZnO/p-CuAlO2/ITO p-n hetero-junction series, the thickness chosen for p-layer and n-layer are: =100, 200, 300nm and =40, 80, 120nm, respectively. The turn-on voltage is about 2.0V. The breakdown voltage increases with the increase of p-layer and n-layer thickness. The on-glass p-n hetero-junction ( =200nm, =80nm) shows a rectify ratio of at ±4V and UV responsivity of A/W at -6V. In the n⁺AZO/n-MgxZn1-xO/p-CuAlO2/ITO p-n hetero-junction series, the content of Mg in n-MgxZn1-xO is varied as: 0, 0.05, 0.1 and 0.3. The turn-on voltage and breakdown voltage increase as the content of Mg in n-MgxZn1-xO layer increases. Under the UV irradiation of 365nm, its responsivity decreases as Mg content in n-MgxZn1-xO layer increases. In the n⁺AZO/i-ZnO/p-CuAlO2/ITO p-i-n⁺ hetero-junction series, the thickness of i-type is varied as: =10, 20, 40nm. The turn-on voltage and breakdown voltage increase as the i-layer thickness increases. The on-glass p-i-n⁺ hetero-junction ( =10nm) shows a rectify ratio of at ±4V. The turn-on voltage is about 1.8V, the breakdown voltage is about -9.9V and the UV responsivity at -6V is A/W.