Research of Microwave and Millimeter-wave Power Amplifiers and Frequency Multipliers

• Main Authors: Chi-Cheng Hung, 洪其正
• Other Authors: Huei Wang
• Format: Others
• Language: en_US
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/27098351036557904457

碩士 === 臺灣大學 === 電信工程學研究所 === 98 === This thesis consists of two parts. The first part is CMOS power amplifiers. Chapter 2 introduces the power amplifier theories. In chapter 3, a K-band CMOS power amplifier is designed using 3-stages cascode topology. The power stage is combined with two power cells. With appropriate device selection and matching, the power amplifier is measured with 22.5-dB of gain and 20.1-dBm of output power, provides good performance in K-band. Some inconsistent between simulation and measurement are observed, and could be corrected by proper simulation setup. The second part is the frequency multipliers. Chapter 4 introduces the design concepts of the frequency multipliers. In chapter 5, two sixtuplers consist of doublers, buffer amplifiers, and triplers, are introduced; moreover, both of the two circuits are critical parts for assembling the ALMA’s LO driver modules. The first sixtupler was fabricated in mHEMT process, which was in co-operation with other members in our lab. Due to lack of the large-signal parameters of the device, the circuit performs over -22.9 dB of conversion gain under 14.5 dBm of input power, as well as harmonic rejection better than 40 dB from 72-114 GHz. The second sixtupler is implemented in pHEMT process. The improvements of building blocks, as well as accurate large-signal model contribute to a significant improvement to the performance. The second circuit measured with > -13.5 dB of conversion gain when driving 10 dBm of input power from 72-117 GHz. The harmonic rejection is better than 24 dB.