P-contact Photolithography Process Development for GaN-based Devices
碩士 === 國立臺灣科技大學 === 光電工程研究所 === 98 === GaN is one of the major materials for fabricating light-emitting diodes (LED). The ternary compound semiconductor InxGa1−xN having a direct band gap from about 0.7eV to 3.4 eV is applicable in the fields of light-emitting diodes and solar cells. Because p-GaN...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27476138620366673149 |