The Investigation on Short-Channel Bebavior Model for the SOI Four-Gate Transistor
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 98 === In recent years, silicon-on-insulator (SOI) four-gate transistors have already caused extensive attention. With improved current drive and short-channel characteristics, semiconductors depicts not only switch from bulk to SOI, but also evolve from single-gate p...
Main Authors: | Ming-Jie Yang, 楊鳴傑 |
---|---|
Other Authors: | Te-Kuang Chiang |
Format: | Others |
Language: | en_US |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/54747642465118960227 |
Similar Items
-
Chloride transport bebavior in Fly Ash Concrete
by: Yen-Chih Liu, et al.
Published: (2011) -
Applying innovation diffusion theory and technology acceptance model to investigate the bebavioral intention of using mobile commerce
by: Han-Tse Chiu, et al.
Published: (2016) -
Device and circuit simulation of nanoscale double gate SOI transistors
by: Lim, T. C.
Published: (2008) -
The modeling of the short channel devices in deep-submicrometer range:including GaAs MESFET''s, Si-SOI MESFET''s, SOI MOSFET''s and double-gate SOI MOSFET''s
by: 江德光
Published: (1998) -
Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation
by: Mohammad K. Anvarifard, et al.
Published: (2013-01-01)