Study of flip chip packaging technique on high power LEDs by adopting silicon submount

• Main Authors: Yan-Wun Jhuang, 莊顏聞
• Other Authors: 陳文瑞
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/w37a4s

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 98 === This thesis is to by the MEMS (Micro Electro Mechanical System) produced the LED micro-package structure, and used for Flip Chip technique, components of small size and modulization. Fabricate the LED packaged circuit patterns in Silicon substrate with silicon skilled process technique. After packaged circuit, we used electrode plating process to thicken the electrode reducing resistance, and raising conductivity and heat dissipation. It expects to use Wafer Level Packaging to produce numerous modules for reducing the manufacturing cost in the future after this packaged technique skilled. In this study, we experimented with different thick electrode and discovered the difference between conductivity and heat dissipation. According to the Cu electroplating experiments, the resistance decreased obviously about 0.14Ω at 2μm and 5μm. The surface temperature will decrease with the increase of electrode thickness (68.3oC, 63.8oC, respectively). However the Au film was electroplated to prevent oxidation on Cu surface since Cu was easily oxidized. The result showed the difference between with and without Au of resistance was about 0.016Ω after the oxidation tests. Moreover, we used four types different under filler materials (Diamond, Carbon, Silicone, and Epoxy) to observe LED heat dissipation compared with the without filler. It showed that the surface temperatures became lower after filler. Especially filler with Diamond, it declined about 12.51%. Subsequences were Carbon (9.02%), Silicone (7.13%), and Epoxy (5.38%).