The study of CdS thin film prepared for chemical bath deposition at Low Temperature
碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 98 === Abstract The study is focused on sulfide compound prepared by chemical bath deposition. By under different condition, the samples exhibit various properties. Our process have many advantages including low cadimun waste and low processing temperature, co...
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ndltd-TW-098NYPI51590172019-10-07T03:38:38Z http://ndltd.ncl.edu.tw/handle/s98h5z The study of CdS thin film prepared for chemical bath deposition at Low Temperature 低溫化學水浴法沉積硫化鎘薄膜製程之研究 Ruei-Teng Lin 林睿騰 碩士 國立虎尾科技大學 材料科學與綠色能源工程研究所 98 Abstract The study is focused on sulfide compound prepared by chemical bath deposition. By under different condition, the samples exhibit various properties. Our process have many advantages including low cadimun waste and low processing temperature, compared to traditional CBD process. Conditions in the manufacturing process the temperature is 50 ° C based , and to change their bath reaction time (10-90min), reactant concentration, as well as changes in PH value (10-10.5) , and the wrong mixture of doping and different concentration of various formulation parameters, using SEM (scanning electron microscope) to observe the surface morphology of the specimen to XRD (X-ray diffraction analyzer) to analyze its crystal structure. CdS films have a low PH value (111) preferred orientation for the cubic sphalerite structure (Znic blende Cubic); in raising the value of the bath after PH, CdS films (111) preferred orientation orientation to (100), (002), (101) that is converted to wurtzite hexagonal structure (Wurtzite Hexagonal), and the use of UV spectroscopy (UV - visible spectrometer), low temperature PL (photoluminescence spectrometer) to measure the optical properties of thin films, the optical energy gap about 2.2-2.4eV. Selection process the better formula in the preparation of CIGS solar cells, observed by FESEM CIGS absorbing layer deposited on the buffer layer on the film surface structure and cross-sections, re-use solar cell IV curve measurements. Deposition of copper indium gallium selenium (CIGS) thin film solar cell absorption layer as a buffer layer of bath compositions, in response to 30 min when the cover piece of film deposition and film thickness can be controlled best in the 60-80 nm between The solar cell conversion efficiency of 6.94%. Keywords: Photovoltaic Devices, Solar Cells, buffer layers,CIGS、CdS、IV measurement 楊立中 2010 學位論文 ; thesis 149 zh-TW |
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碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 98 === Abstract
The study is focused on sulfide compound prepared by chemical bath deposition. By under different condition, the samples exhibit various properties. Our process have many advantages including low cadimun waste and low processing temperature, compared to traditional CBD process.
Conditions in the manufacturing process the temperature is 50 ° C based , and to change their bath reaction time (10-90min), reactant concentration, as well as changes in PH value (10-10.5) , and the wrong mixture of doping and different concentration of various formulation parameters, using SEM (scanning electron microscope) to observe the surface morphology of the specimen to XRD (X-ray diffraction analyzer) to analyze its crystal structure.
CdS films have a low PH value (111) preferred orientation for the cubic sphalerite structure (Znic blende Cubic); in raising the value of the bath after PH, CdS films (111) preferred orientation orientation to (100), (002), (101) that is converted to wurtzite hexagonal structure (Wurtzite Hexagonal), and the use of UV spectroscopy (UV - visible spectrometer), low temperature PL (photoluminescence spectrometer) to measure the optical properties of thin films, the optical energy gap about 2.2-2.4eV.
Selection process the better formula in the preparation of CIGS solar cells, observed by FESEM CIGS absorbing layer deposited on the buffer layer on the film surface structure and cross-sections, re-use solar cell IV curve measurements. Deposition of copper indium gallium selenium (CIGS) thin film solar cell absorption layer as a buffer layer of bath compositions, in response to 30 min when the cover piece of film deposition and film thickness can be controlled best in the 60-80 nm between The solar cell conversion efficiency of 6.94%.
Keywords: Photovoltaic Devices, Solar Cells, buffer layers,CIGS、CdS、IV measurement
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author2 |
楊立中 |
author_facet |
楊立中 Ruei-Teng Lin 林睿騰 |
author |
Ruei-Teng Lin 林睿騰 |
spellingShingle |
Ruei-Teng Lin 林睿騰 The study of CdS thin film prepared for chemical bath deposition at Low Temperature |
author_sort |
Ruei-Teng Lin |
title |
The study of CdS thin film prepared for chemical bath deposition at Low Temperature |
title_short |
The study of CdS thin film prepared for chemical bath deposition at Low Temperature |
title_full |
The study of CdS thin film prepared for chemical bath deposition at Low Temperature |
title_fullStr |
The study of CdS thin film prepared for chemical bath deposition at Low Temperature |
title_full_unstemmed |
The study of CdS thin film prepared for chemical bath deposition at Low Temperature |
title_sort |
study of cds thin film prepared for chemical bath deposition at low temperature |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/s98h5z |
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