The Study of Nano-Silicon Particles and Application Its on Light Emitting Painting

• Main Authors: Wen-Jane Tsay, 蔡文禎
• Other Authors: Jia-Chuan Lin
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/25049561279714570571

碩士 === 中國文化大學 === 材料科學與奈米科技研究所 === 98 === The silicon-based single crystal is an indirect bandgap. However, porous silicon exhibits photoluminescence (PL) property in visible range. It opens a new window to develop photoelectric industry. The light emitting properties of porous silicon are studied. Various porous silicon wafers are used to obtain the micro-sized silicon particles which have a lot of nano-scaled pores and pillars. The particles are combined with reains to from an available light emitting ingot. The Scanning Elector Microscope (SEM)、Photoluminescence (PL)、Integrating sphere and Particle size distribution (PSD) are used to measure the photoelectric properties. The oxidation on the surface of porous silicon is the main issue which decays the intensity and lifetime of light emitting. It also leads to a blue shift on the light emitting wavelength. The new methods proposed in the study can extend the lifetime of light emitting ingot. Besides, the Brunauer-Emmett-Teller (BET) are used to measure the surface area to volume ratios. A high ratio can be obtained on the smaller silicon particles. In addition, the transmittance and reflectance of the light-emitting ingots are measured by Integrating sphere. In the study, the light emitting ingots with small silicon particles can emitte a stable visible lights in room temperature for a much longer time compared with conventional porous silicon thin films. PS almost applied to the sensor、phtotdectector、solar cells …. We wish for more application to the porous silicon particle.