Study and Fabrication of High Luminescence Gallium Nitride Light Emitting Diode

• Main Authors: Hung,shun yuan, 黃順源
• Other Authors: Hon-Kuan
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/98740848985171112174

碩士 === 南台科技大學 === 光電工程系 === 98 === High power light emitting diodes (LEDs) has been become the study mainstream in this present. In this study, we improved the lateral light output with different angle of the triangle (the angle of the triangle were 60° and 47°). And we used the simulation softer (TRACE-PRO) that confirmed the flux light output of angle of 47° could improve about 1.6%. In the transparent conductive thin film (ITO) that properties of electrical and optical has been discussed. When the anneal gas with oxygen that obtained resistivity was 3.12x10-4 Ω-cm and the TLM was 5.83x10-2 Ω-cm2 . The transmittance of ITO was about 93.5% that compared with Ni/Au films improved 23%. Improve the light output power with rough surface and sidewall of gear structure. In this experiment, the chip size was 300μm X 300μm. LED of gear structure could improve the light output power was 18% that compare with square structure and used the transparent conductive thin film of ITO could increase the light output power was 48% that compare with the transparent conductive thin film of Ni/Cu. And then we applied the transparent conductive thin film of ITO and gear structure on large chip size (1 mm x 1mm) that the light output power was increased 16%.