| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 98 === This work reports on the photovoltaic properties of zinc phthalocyanine (ZnPc) films with I2 dopant, and sandwiched between indium tin oxide (ITO) and n-type microporous GaAs substrates. The microporous morphology on GaAs substrates were fabricated utilizing Ag metal-assisted etching technique under electroless condition. Then, we investigates the surface morphology of microporous GaAs substrates with different etching times.
The experimental results indicated the microporous structures of GaAs are larger and clearly defined as increasing etching time. The lower reflectivity of microporous structures was observed in 20 min of etching time. As increasing the etching depth and porous density, the interfacial area between ZnPc and porous GaAs also increases; and the solar energy-to-electricity conversion efficiency of photovoltaic device obtain about 2.14% under AM 1.5, 10 mW/cm2. Furthermore, the porous GaAs substrate immersed in BOE (Buffer oxide etch) in 90s to remove GaAs native oxide, the short-circuit density Jsc is raising from 2.24 to 2.91 mA/cm2 . Also the oxide layer could work as a barrier to reduce the electron transfer at the ZnPc/ porous GaAs interface. In addition to add golden nanoparticle layer between ZnPc and porous GaAs can promote short-circuit current density Jsc. Eventually, the best photovoltaic properties were obtained about Jsc = 3.38 mA/cm2, Voc = 0.57 V and η =3.64 %.
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