The study of growth of ZnO nanostructures

• Main Authors: Wei-Hsuan Tsai, 蔡維軒
• Other Authors: 王耀德
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/f5ht72

碩士 === 國立臺北科技大學 === 光電工程系研究所 === 98 === In this research we wanted to study the influence of the ZnO buffer layer on growing ZnO nanostructures. In the experiment, first, growing nanostructures on the sapphire substrates by VS growth mechanism, then using XRD and SEM to measure or analyse the property of structures. When there does not have the buffer layer, the quantity of nanowires would decrease, if carrier gas flow rate increased. If the growing time increased, the quantity of nanowires would increase﹐the wire radius would increase, too. In the higher temperature, the structure of nanowires will become more wider, and form many nanoblets. In this experiment, the ZnO buffer layer is preparing by RF magnetron sputter. The research showed that the amount of nanowires will not depended no the buffer layer. And no matter it has the buffer layer or not, the width of nanowire in high temperature is thicker than in low temperature. This experiment discovered, that the buffer layer will make the radius of nanowire trending identically.