| Summary: | 碩士 === 元智大學 === 光電工程研究所 === 98 === Recently, progress of phosphorescence OLEDs (PHOLEDs) was achieved owing to their ability to harvest both singlet and triplet exciton, providing a potential to realize internal quantum efficiencies of 100%. However, in typical PHOLEDs device structures, numerous functional layers were required for charge injection, transport, blocking, balance, emitting, and so forth, which increase the manufacturing complexity and cost. Therefore, it is highly desirable in fabricating efficient simplified PHOLEDs, especially single layer devices. Efficient green and red single layer PHOLEDs were fabricated using direct hole injection into and transport on triplet dopant strategy. But blue single layer PHOLEDs reported so far have not been satisfactory due to high energy barrier for hole to directly inject into commercial low HOMO blue dopant FIrpic. In this work, we introduce a phosphine-oxide-based, high triplet energy, shallow HOMO energy host POCz3 doped with a bipolar blue phosphorescence dopant FIrpic, resulting into an efficient single layer blue phosphorescence OLEDs. Efficient single layer green, red, and white PHOLEDs using a “direct hole injection into and transport on triplet dopant” strategy are demonstrated in this work.
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