Transverse Mode Transition in 850nm Vertical-Cavity Surface-Emitting Laser
碩士 === 長庚大學 === 光電工程研究所 === 99 === LD laser diode are wide used in all areas, such as optical fiber communication, light storage, military affairs, monitors, localization calibration, medical treatment, body feeling games, laser mouse, and computer applications. LD which owns many benefits: high...
Main Authors: | Cheng lung, Lin, 林政隆 |
---|---|
Other Authors: | N. C. Chen |
Format: | Others |
Published: |
2011
|
Online Access: | http://ndltd.ncl.edu.tw/handle/46212074803211560142 |
Similar Items
-
The Study on Process of 850nm Vertical Cavity Surface Emitting Laser
by: Shao-Jung You, et al.
Published: (2008) -
Investigation of 850 nm GaAs Vertical Cavity Surface Emitting Lasers
by: Shan-Fong Leong, et al.
Published: (2016) -
Design of Cavities for 850 nm AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers
by: zhin-chang Lin, et al.
Published: (2001) -
Ultrafast 850nm and 940nm Vertical-Cavity Surface-Emitting Lasers under High-Temperature Operations
by: Chen-Lung Cheng, et al.
Published: (2019) -
Study of 850 nm Oxidized and Implanted Vertical Cavity Surface Emitting Lasers
by: Ya-Ju Lee, et al.
Published: (2002)