Gd2O3/La2O3 of High Breakdown Voltage GaN HEMT with Field-Plate Technology

• Main Authors: Jing Wen Huang, 黃靖文
• Other Authors: H. C. Chiu
• Format: Others
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/10577731565006749369

碩士 === 長庚大學 === 電子工程學系 === 99 === Gallium nitride is a binary III / V direct bandgap semiconductor. It’s wide band gap of 3.4 eV, high-power and high-frequency devices. GaN can work at much hotter temperatures and run at much higher voltages than gallium arsenide transistors. They are perfect materials for power amplifiers at microwave frequencies. The high breakdown is 140V of La2O3. On the other hand, Gmax is 132mS/mm of La2O3. The paper consists of several parts : introduction, analysis materials and current characteristic for oxide layers (Gd2O3/La2O3), electrostatic discharge test, and so on. We implanted different oxide layers on GaN. In this case, we’re particularly interested in improving the power performance by inserting the thin lanthanum/gadolinium oxide layer on the bottom of conventional Ni/Au gate in AlGaN/GaN HEMT fabrication. The dielectric constant of Gd2O3/La2O3 are about 21.49/30.45 which provide a high channel control ability in FET. Study on measurement of results and ESD. We found gold plating process, the ESD damages could be prevented.