Gd2O3/La2O3 of High Breakdown Voltage GaN HEMT with Field-Plate Technology
碩士 === 長庚大學 === 電子工程學系 === 99 === Gallium nitride is a binary III / V direct bandgap semiconductor. It’s wide band gap of 3.4 eV, high-power and high-frequency devices. GaN can work at much hotter temperatures and run at much higher voltages than gallium arsenide transistors. They are perfect materi...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10577731565006749369 |