| Summary: | 碩士 === 長庚大學 === 電子工程學系 === 99 === This thesis includes three parts, first part we used CMOS 0.18μm technology to design a 3.793 GHz and a 6.05 GHz colpitts VCOs Second part the GaAs pHEMT 0.15μm technology was adopted to design a Ka-band differential VCO, and finally wet used CMOS 0.18μm technology to design a Ka-band SPST switch.
In the first part, we designed a 3.793 GHz and 6.05 GHz VCOs by Colpitts structure. The 3.793 GHz VCO achieved the output power of -27 dBm, tuning range of 0.434 GHz, and the phase noise offset at 1 MHz was -101.5 dBc/Hz. These results were -25 dBm, 0.4 GHz, and -91.55 dBc/Hz for 6.05 GHz VCO.
In the second part, the Ka-Band VCO was designed by differential mode structure. The output power was -8.05 dBm, tuning range was 1.61 GHz and the phase noise offset at 1 MHz was -93dBc/Hz.
In the last part, Ka-Band SPST switch was developed by using Semi-circle Stacked GCPW transmission line. The measured result shows that the insertion loss is about -7.2dB, the return loss is -27 dB and the isolation is about -29 dB.
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