| Summary: | 碩士 === 正修科技大學 === 電子工程研究所 === 99 === In this paper, the aluminum doped zinc oxide (AZO) thin films have been prepare by direct current magnetron sputtering on flexible substrate, that was divided into five parts. The first part to fifth part are various substrate temperature, added the buffer layer, various process pressure, various substrate bias voltage, and various process power. Those effects of process parameters for thin films properties were investigated. The experimental results were analyzed by X-ray diffraction, Hall measurement, UV-Vis, and FE-SEM. The properties of structure, properties, electrical properties, optical properties, and surface morphology by measuring instruments, and then adding stress principle of the XRD analyzed was discussed, finally. From the experimental result, there are the highest carrier concentration 2.47 x1020 cm-3, the highest Hall mobility 11.1 cm2/Vs, and the lowest resistivity 2.28x10-3 Ω-cm, when the substrate and process pressure are 110 oC and 3 mtorr.
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