Characteristics of Flexible ZnO Transparent Conducting Thin Films
碩士 === 正修科技大學 === 電子工程研究所 === 99 === In this paper, the aluminum doped zinc oxide (AZO) thin films have been prepare by direct current magnetron sputtering on flexible substrate, that was divided into five parts. The first part to fifth part are various substrate temperature, added the buffer layer,...
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ndltd-TW-099CSU004280122015-10-13T20:32:28Z http://ndltd.ncl.edu.tw/handle/39460939089572059700 Characteristics of Flexible ZnO Transparent Conducting Thin Films 可撓式氧化鋅透明導電薄膜之特性研究 Ming-chieh Chuang 莊明潔 碩士 正修科技大學 電子工程研究所 99 In this paper, the aluminum doped zinc oxide (AZO) thin films have been prepare by direct current magnetron sputtering on flexible substrate, that was divided into five parts. The first part to fifth part are various substrate temperature, added the buffer layer, various process pressure, various substrate bias voltage, and various process power. Those effects of process parameters for thin films properties were investigated. The experimental results were analyzed by X-ray diffraction, Hall measurement, UV-Vis, and FE-SEM. The properties of structure, properties, electrical properties, optical properties, and surface morphology by measuring instruments, and then adding stress principle of the XRD analyzed was discussed, finally. From the experimental result, there are the highest carrier concentration 2.47 x1020 cm-3, the highest Hall mobility 11.1 cm2/Vs, and the lowest resistivity 2.28x10-3 Ω-cm, when the substrate and process pressure are 110 oC and 3 mtorr. 王納富 蔡有仁 2011 學位論文 ; thesis 0 zh-TW |
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碩士 === 正修科技大學 === 電子工程研究所 === 99 === In this paper, the aluminum doped zinc oxide (AZO) thin films have been prepare by direct current magnetron sputtering on flexible substrate, that was divided into five parts. The first part to fifth part are various substrate temperature, added the buffer layer, various process pressure, various substrate bias voltage, and various process power. Those effects of process parameters for thin films properties were investigated. The experimental results were analyzed by X-ray diffraction, Hall measurement, UV-Vis, and FE-SEM. The properties of structure, properties, electrical properties, optical properties, and surface morphology by measuring instruments, and then adding stress principle of the XRD analyzed was discussed, finally. From the experimental result, there are the highest carrier concentration 2.47 x1020 cm-3, the highest Hall mobility 11.1 cm2/Vs, and the lowest resistivity 2.28x10-3 Ω-cm, when the substrate and process pressure are 110 oC and 3 mtorr.
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王納富 |
author_facet |
王納富 Ming-chieh Chuang 莊明潔 |
author |
Ming-chieh Chuang 莊明潔 |
spellingShingle |
Ming-chieh Chuang 莊明潔 Characteristics of Flexible ZnO Transparent Conducting Thin Films |
author_sort |
Ming-chieh Chuang |
title |
Characteristics of Flexible ZnO Transparent Conducting Thin Films |
title_short |
Characteristics of Flexible ZnO Transparent Conducting Thin Films |
title_full |
Characteristics of Flexible ZnO Transparent Conducting Thin Films |
title_fullStr |
Characteristics of Flexible ZnO Transparent Conducting Thin Films |
title_full_unstemmed |
Characteristics of Flexible ZnO Transparent Conducting Thin Films |
title_sort |
characteristics of flexible zno transparent conducting thin films |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/39460939089572059700 |
work_keys_str_mv |
AT mingchiehchuang characteristicsofflexibleznotransparentconductingthinfilms AT zhuāngmíngjié characteristicsofflexibleznotransparentconductingthinfilms AT mingchiehchuang kěnáoshìyǎnghuàxīntòumíngdǎodiànbáomózhītèxìngyánjiū AT zhuāngmíngjié kěnáoshìyǎnghuàxīntòumíngdǎodiànbáomózhītèxìngyánjiū |
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1718048032125091840 |