Study of Silicon Surface Passivation with Aluminum Oxide Films Grown by APMOCVD

• Main Authors: Sz-Tseng Wu, 吳思增
• Other Authors: Shan-Ming Lan
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/72511456050931907165

碩士 === 中原大學 === 電子工程研究所 === 99 === With the solar cell direction of production is reduce the thickness , it makes the surface recombination velocity more dominant the overall efficiency of solar cells. Therefore, research teams around the world have invested in order to study the surface passivation to reduce surface recombination velocity. This paper will use the metal organic chemical vapor deposition system to deposite the aluminum oxide thin-film on c-Si substrate, and import the annealing process in order to increase the minority carrier lifetime, and improve the surface recombination velocity. In this experiment, the minority carrier lifetime measurement is performed using the microwave-reflection photo-conductance-decay (MRPCD) technique, which is capable of determining the lifetime of a silicon wafer. We also used capacitance-voltage measurement to calculate the fixed charge density. After aluminum oxide thin-film passivation step, it shows an increasing in the minority carrier lifetime from 16.53us to 135.98us. The surface recombination velocity downs to 73.54cm/s, and the fixed charge density is -2.32x1012cm-2.