Fabrication of Silicon Nanowires Solar Cells on UMG-Si Substrates by the VLS Method

• Main Authors: Chin-Hsuan Chiang, 江志軒
• Other Authors: Shan-Ming Lan
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/27549708676441722978

碩士 === 中原大學 === 電子工程研究所 === 99 === In this study, the growth of silicon nanowires on upgraded metallurgical grade Si (UMG-Si) substrates was catalyzed by nickel (Ni) using atmospheric pressure halide chemical vapor deposition technique. A favorable growth condition of silicon nanowires has been examined by varying the annealing temperature and time, and growth time duration of Ni film in the ranges 900-975C and 2-12 min, respectively. Moreover, the output characteristics of the silicon nanowires based (SiNWs) solar cells were analyzed and compared. It was found that a conversion efficiency over 1% could be achieved for the SiNWs solar cells fabricated with the Ni catalytic film annealed at 950C. In particular, by annealing the Ni catalytic film for a short duration of 2 min for growing Si wires, the solar cell produced thereon demonstrated a fill factor of 55% and an efficiency as high as 2.06% under an illumination intensity of 100 mW/cm2.