| Summary: | 碩士 === 逢甲大學 === 材料科學所 === 99 === Cuprous Oxide (Cu2O), an easily obtained binary compound, is a p-type semiconductor material which is low cost, and non-toxict. The energy gap is 2.0-2.2 eV and the optical bandgap is in visible light range (390-780 nm). Furthermore, it may cause photoelectric effect under the sunlight. To sum up, this compound can be applied in solar cells production process.
Polyethylene terephthalate, PET, a kind of flexible substrates, owns good optical character and is not easy to get broken. In comparison with other materials PET has the advantage of lightness, thinness and being portable. In this study, PET flexible substrate is chosen for the substrates.
In contrast with the current metal plasma technique, high power impulse magnetron sputtering (HIPIMS) is new and developing. It has the benefits of high-density plasma and low temperature process. And the film from HIPMS is highly crystalline and density. Hence, this study adopts HIPIMS and uses Cu as target material to produce Cu2O thin films on Polyethylene terephthalate under control of O2 pressure ratios. In addition to analyzing their structures and photoelectric characters, I will also compare the thin films from both DC magnetron sputtering (DCMS) and HIPIMS. The experimental results show that highly crystalline Cu2O thin films can be produced on PET flexible substrate by using HIPIMS. Its micro structures, electric and optical characters are closely related to various O2 pressure ratios. When O2 pressure ratios reach to 27.9 mPa, Available for the main phase structure of cuprous oxide, the resistivity is 1509 (Ω-cm), carrier mobility 307.8 (cm2/v．s), carrier concentration 1.73×1013 (cm-3) and optical energy gap 2.06 eV. From our experimental results, Cu2O thin films under low temperature on PET substrates produced from HIPIMS have great potential for the process of flexible solar cell.
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