| Summary: | 碩士 === 逢甲大學 === 通訊工程所 === 99 === In this thesis, TSMC 0.18 um 1P6M CMOS process and TSMC SiGe 0.35 um BICMOS process are used to design low-noise amplifier for three bands, including 5.25 GHz to 5.35 GHz for WLAN band, 13 GHz and 24 GHz dual-band low-noise amplifier for satellite News gathering systems,.
In the WLAN low noise amplifier, the cascode structure is used in the first stage to get low noise figure and the differential output can be easily used in differential input of the mixer. In the dual-band low noise amplifier, a simple structure circuit is used to solve the high frequency effecting in the complex circuit, using shunt resonant circuit to produce dual-band effect, and the Advanced Design System Momentum to improve the TSMC inductance module. In order to make the output power to be more efficient, a gain control low noise amplifier has been designed by changing the gate voltage of the second stage, to adjust the power output.
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