The Characteristic Analysis of RF Switches for GaAs pHEMT
碩士 === 義守大學 === 電機工程學系碩士班 === 99 === Due to the superior characteristics of low insertion loss, high isolation and high speed, GaAs pHEMT has been widely used to design RF switch. In this thesis, an RF switch for Quad-band cell phone was designed and fabricated. Since the switch is used for commerci...
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57515571045022889885 |
| Summary: | 碩士 === 義守大學 === 電機工程學系碩士班 === 99 === Due to the superior characteristics of low insertion loss, high isolation and high speed, GaAs pHEMT has been widely used to design RF switch. In this thesis, an RF switch for Quad-band cell phone was designed and fabricated. Since the switch is used for commercial system, the chip size and cost are main concerns.
A three gates structure was employed to overcome the high power specification and the uneven structure of transmission path (two-section) and receiving path (one-section) was introduced to reduce the chip size. The simulation and measurement results were compared and showed a good agreement.
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