| Summary: | 碩士 === 龍華科技大學 === 工程技術研究所 === 99 === Zinc oxide thin film following photoelectric industry development, which is widely used in markets such as: light emitting diodes, solar cells, gas sensors, light detectors, sound sensors. The study by the sol-gel method combined with spin coating, the film deposited on glass substrates. Preparation of wurtzite structure and the c-axis oriented thin films of aluminum doped zinc oxide. Wurtzite structure of strength will decrease with increasing doping concentration, it will destroy aluminum doped zinc oxide structure. In addition, if the annealing temperature increased, providing more energy, improve the quality and crystallinity of films. Thin film nano-particle average size is less than 100 nm. The film thickness is about 500 ~ 650 nm. UV-VIS-NIR test results can be informed that the Al doped zinc oxide films in the visible light transmittance of 75%, and in the short wavelength range with a steep absorption peak. The control of doping and annealing temperature will produce a shift in the absorption peak. UV-VSI-NIR test results can be calculated aluminum zinc oxide thin film energy gap. The proportion of the energy gap increased with the Al-doped (0% to 5%) and larger (3.27 eV ~ 3.34 eV), zinc oxide thin films to control the preheating temperature on the resistivity was not affected, but annealing temperature increases will resistivity decreased. 1% Al doped film resistor when the best rate 5.3×101 Ω．cm.
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