Optical Properties and Electrical Characteristics of Aluminum-doped Zinc Oxide Films by Sol-Gel Process
碩士 === 龍華科技大學 === 工程技術研究所 === 99 === Zinc oxide thin film following photoelectric industry development, which is widely used in markets such as: light emitting diodes, solar cells, gas sensors, light detectors, sound sensors. The study by the sol-gel method combined with spin coating, the film depos...
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ndltd-TW-099LHU054890142015-10-13T20:46:53Z http://ndltd.ncl.edu.tw/handle/47866490240628313327 Optical Properties and Electrical Characteristics of Aluminum-doped Zinc Oxide Films by Sol-Gel Process 以溶膠凝膠法製備氧化鋅鋁薄膜探討其光學特性與電性之研究 Fu-yuan Siao 蕭富元 碩士 龍華科技大學 工程技術研究所 99 Zinc oxide thin film following photoelectric industry development, which is widely used in markets such as: light emitting diodes, solar cells, gas sensors, light detectors, sound sensors. The study by the sol-gel method combined with spin coating, the film deposited on glass substrates. Preparation of wurtzite structure and the c-axis oriented thin films of aluminum doped zinc oxide. Wurtzite structure of strength will decrease with increasing doping concentration, it will destroy aluminum doped zinc oxide structure. In addition, if the annealing temperature increased, providing more energy, improve the quality and crystallinity of films. Thin film nano-particle average size is less than 100 nm. The film thickness is about 500 ~ 650 nm. UV-VIS-NIR test results can be informed that the Al doped zinc oxide films in the visible light transmittance of 75%, and in the short wavelength range with a steep absorption peak. The control of doping and annealing temperature will produce a shift in the absorption peak. UV-VSI-NIR test results can be calculated aluminum zinc oxide thin film energy gap. The proportion of the energy gap increased with the Al-doped (0% to 5%) and larger (3.27 eV ~ 3.34 eV), zinc oxide thin films to control the preheating temperature on the resistivity was not affected, but annealing temperature increases will resistivity decreased. 1% Al doped film resistor when the best rate 5.3×101 Ω.cm. Wen-pin Weng 翁文彬 2011 學位論文 ; thesis 60 zh-TW |
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碩士 === 龍華科技大學 === 工程技術研究所 === 99 === Zinc oxide thin film following photoelectric industry development, which is widely used in markets such as: light emitting diodes, solar cells, gas sensors, light detectors, sound sensors. The study by the sol-gel method combined with spin coating, the film deposited on glass substrates. Preparation of wurtzite structure and the c-axis oriented thin films of aluminum doped zinc oxide. Wurtzite structure of strength will decrease with increasing doping concentration, it will destroy aluminum doped zinc oxide structure. In addition, if the annealing temperature increased, providing more energy, improve the quality and crystallinity of films. Thin film nano-particle average size is less than 100 nm. The film thickness is about 500 ~ 650 nm. UV-VIS-NIR test results can be informed that the Al doped zinc oxide films in the visible light transmittance of 75%, and in the short wavelength range with a steep absorption peak. The control of doping and annealing temperature will produce a shift in the absorption peak. UV-VSI-NIR test results can be calculated aluminum zinc oxide thin film energy gap. The proportion of the energy gap increased with the Al-doped (0% to 5%) and larger (3.27 eV ~ 3.34 eV), zinc oxide thin films to control the preheating temperature on the resistivity was not affected, but annealing temperature increases will resistivity decreased. 1% Al doped film resistor when the best rate 5.3×101 Ω.cm.
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author2 |
Wen-pin Weng |
author_facet |
Wen-pin Weng Fu-yuan Siao 蕭富元 |
author |
Fu-yuan Siao 蕭富元 |
spellingShingle |
Fu-yuan Siao 蕭富元 Optical Properties and Electrical Characteristics of Aluminum-doped Zinc Oxide Films by Sol-Gel Process |
author_sort |
Fu-yuan Siao |
title |
Optical Properties and Electrical Characteristics of Aluminum-doped Zinc Oxide Films by Sol-Gel Process |
title_short |
Optical Properties and Electrical Characteristics of Aluminum-doped Zinc Oxide Films by Sol-Gel Process |
title_full |
Optical Properties and Electrical Characteristics of Aluminum-doped Zinc Oxide Films by Sol-Gel Process |
title_fullStr |
Optical Properties and Electrical Characteristics of Aluminum-doped Zinc Oxide Films by Sol-Gel Process |
title_full_unstemmed |
Optical Properties and Electrical Characteristics of Aluminum-doped Zinc Oxide Films by Sol-Gel Process |
title_sort |
optical properties and electrical characteristics of aluminum-doped zinc oxide films by sol-gel process |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/47866490240628313327 |
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