Property Studies of TiO2-CuxOy Thin Film Diodes

• Main Authors: He-Sheng Chen, 陳和聲
• Other Authors: Jong-Hong Lu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/30917657470777404203

碩士 === 明志科技大學 === 材料工程研究所 === 99 === Titanium dioxide in high-power process has a wide process window and better structural properties. The low-power process will not be able to get titanium dioxide structured. If the structural propertied of titanium dioxide was not good, then in this case will have a greater leakage current with this devise. The bandgap of Cu2O and Cu4O3 is about 2.25 eV and 1.7 eV in this experiment. Copper oxide and titanium dioxide will be produced diodes in a variety of conditions, the results show high-power process of titanium dioxide with Cu4O3 have best rectifying characteristics and photovoltaic effect. High-power process titanium dioxide film with Cu4O3 diode for the different test, the test results of photovoltaic efficiency show this result is about 0.15%, the conversion efficiency loss is because the low parallel resistance, and also because the relationship between the parallel resistance is too low lead sin-wave testing can’t be negative half-wave-type filter for full-wave rectifier test. At ESD test, the devise can live at 8kV electrostatic bombardment, but cause leak current lead the trigger voltage and clamping voltage properties not well.