Property Studies of TiO2-CuxOy Thin Film Diodes
碩士 === 明志科技大學 === 材料工程研究所 === 99 === Titanium dioxide in high-power process has a wide process window and better structural properties. The low-power process will not be able to get titanium dioxide structured. If the structural propertied of titanium dioxide was not good, then in this case will hav...
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ndltd-TW-099MIT001590052016-04-13T04:17:19Z http://ndltd.ncl.edu.tw/handle/30917657470777404203 Property Studies of TiO2-CuxOy Thin Film Diodes 二氧化鈦-氧化銅薄膜二極體特性研究 He-Sheng Chen 陳和聲 碩士 明志科技大學 材料工程研究所 99 Titanium dioxide in high-power process has a wide process window and better structural properties. The low-power process will not be able to get titanium dioxide structured. If the structural propertied of titanium dioxide was not good, then in this case will have a greater leakage current with this devise. The bandgap of Cu2O and Cu4O3 is about 2.25 eV and 1.7 eV in this experiment. Copper oxide and titanium dioxide will be produced diodes in a variety of conditions, the results show high-power process of titanium dioxide with Cu4O3 have best rectifying characteristics and photovoltaic effect. High-power process titanium dioxide film with Cu4O3 diode for the different test, the test results of photovoltaic efficiency show this result is about 0.15%, the conversion efficiency loss is because the low parallel resistance, and also because the relationship between the parallel resistance is too low lead sin-wave testing can’t be negative half-wave-type filter for full-wave rectifier test. At ESD test, the devise can live at 8kV electrostatic bombardment, but cause leak current lead the trigger voltage and clamping voltage properties not well. Jong-Hong Lu 盧榮宏 2011 學位論文 ; thesis 103 zh-TW |
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碩士 === 明志科技大學 === 材料工程研究所 === 99 === Titanium dioxide in high-power process has a wide process window and better structural properties. The low-power process will not be able to get titanium dioxide structured. If the structural propertied of titanium dioxide was not good, then in this case will have a greater leakage current with this devise. The bandgap of Cu2O and Cu4O3 is about 2.25 eV and 1.7 eV in this experiment. Copper oxide and titanium dioxide will be produced diodes in a variety of conditions, the results show high-power process of titanium dioxide with Cu4O3 have best rectifying characteristics and photovoltaic effect.
High-power process titanium dioxide film with Cu4O3 diode for the different test, the test results of photovoltaic efficiency show this result is about 0.15%, the conversion efficiency loss is because the low parallel resistance, and also because the relationship between the parallel resistance is too low lead sin-wave testing can’t be negative half-wave-type filter for full-wave rectifier test. At ESD test, the devise can live at 8kV electrostatic bombardment, but cause leak current lead the trigger voltage and clamping voltage properties not well.
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author2 |
Jong-Hong Lu |
author_facet |
Jong-Hong Lu He-Sheng Chen 陳和聲 |
author |
He-Sheng Chen 陳和聲 |
spellingShingle |
He-Sheng Chen 陳和聲 Property Studies of TiO2-CuxOy Thin Film Diodes |
author_sort |
He-Sheng Chen |
title |
Property Studies of TiO2-CuxOy Thin Film Diodes |
title_short |
Property Studies of TiO2-CuxOy Thin Film Diodes |
title_full |
Property Studies of TiO2-CuxOy Thin Film Diodes |
title_fullStr |
Property Studies of TiO2-CuxOy Thin Film Diodes |
title_full_unstemmed |
Property Studies of TiO2-CuxOy Thin Film Diodes |
title_sort |
property studies of tio2-cuxoy thin film diodes |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/30917657470777404203 |
work_keys_str_mv |
AT heshengchen propertystudiesoftio2cuxoythinfilmdiodes AT chénhéshēng propertystudiesoftio2cuxoythinfilmdiodes AT heshengchen èryǎnghuàtàiyǎnghuàtóngbáomóèrjítǐtèxìngyánjiū AT chénhéshēng èryǎnghuàtàiyǎnghuàtóngbáomóèrjítǐtèxìngyánjiū |
_version_ |
1718222955937267712 |