| Summary: | 碩士 === 國立中興大學 === 材料科學與工程學系所 === 99 === We reported the synthesis of one-dimension rod-like Sb2Se3 nanostructures by vapor transport process. The result shows that the Au catalysts acted as the heterogeneous nucleation sites and diameter of the Sb2Se3 nanorods strongly depended on the sizes of the Au catalysts. The growth temperature and gas flow rate influenced the morphologies of the Sb2Se3 products, and the growth time affects the diameters and coverage percentage of the Sb2Se3 nanorods. The diameter of the as-synthesized Sb2Se3 nanorods were about 100~200 nm, and length were 12~15μm. The crystal structures of the as-synthesized products were characterized by XRD and TEM. The results confirmed that the as-synthesized nanorods are single-crystalline Sb2Se3 with an Orthorhombic structure. It was also found that the Au catalysts remained at the bottom of the Sb2Se3 nanorods, implying that the Sb2Se3 nanorods were grown by a base-growth mechanism. The memory devices were fabricated by transferring a single Sb2Se3 nanorod onto a SiO2-coated silicon substrate with a 20μm prepatterned Ag pad array prepared by photolithography. Focused ion beam technique was used to directly write 150-nm-thick Pt interconnect lines between the nanorod and Ag pads. The results show that the initially crystalline nanorod reaches a RESET state with 100 ns voltage pulses above 2.9 V. Subsequently, SET voltage pulses with 500ns width were applied to the initially amorphized nanorod up to 2.1V. And the RESET power consumption is only 1.6mW. Therefore, Sb2Se3 nanorods can be an excellent candidate for applications in nonvolatile data storage.
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