| Summary: | 碩士 === 國立暨南國際大學 === 電機工程學系 === 99 === The thesis has completed two of readout circuit. The direct injection with variable integration capacity and double switch circuit design for dual sensor, respectively. The variable integration capacity was used direct injection(DI) structure. While the direct injection dual band readout circuit with to adjust integration capacity. The structure of direct injection with variable integration capacity is based on double unit cell readout. The enhanced capacity has achieved integration and sampling capacitors sharing mechanism by the switch controller. This circuit is simulation by using the TSMC 0.35um 2P4M CMOS 5V of the process. The layout area of unit pixel circuit is 30umx30um. The photo current of middle wavelength and long wavelength set 2nA to 4nA and 6nA to 8nA, respectively. The output swing ragne is 2.8V, output frequency is 12 MHz. The circuit total power consumption is 18.88 mW.
The readout circuit structure of double switch circuit design for dual sensor. It is composed of direct injection(DI) and capacitive transimpedance amplifier(CTIA). The circuit has four operates readout method of single or dual band sensor by using digital controller. This circuit is simulation by using the TSMC 0.35um 2P4M CMOS 5V of the process. Set the middle wavelength input current 2nA to 4nA, and long wavelength input current 6nA to 8nA. The Output swing rang is 2.8V, output frequency is 12 MHz. The circuit total power consumption is 22.19 mW.
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