A Low-Power Low-Voltage Dual-Path Pipelined ADC

碩士 === 國立交通大學 === 電子研究所 === 99 === With recent application on higher speed and higher integration capability of circuits; The trend that the channel length of MOS transistor is smaller and the thinkness of gate oxide also becomes thinner. Therefore, the intrinsic gain of MOS transistor is lower and...

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Bibliographic Details
Main Authors: Chai, Angelia Yolanda, 翟芸
Other Authors: Wu, Jieh-Tsorng
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/41878529653789855808
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Summary:碩士 === 國立交通大學 === 電子研究所 === 99 === With recent application on higher speed and higher integration capability of circuits; The trend that the channel length of MOS transistor is smaller and the thinkness of gate oxide also becomes thinner. Therefore, the intrinsic gain of MOS transistor is lower and the operation voltage is also reduced. By the demand of integrate analog-to-digital converter with digital signal-processing system in the same chip (SOC), a low-power low-voltage analog-to-digital converter is an important key factor in mixed signal system nowadays. The improved Pipelined analog-to-digital converter adopts a Dual-Path structure. It utilizes two seperated analog-to-digital converter pathes with inaccurate specifications to generate a high accurate signal value. By a large reducing of the accuracy required in this novel strcture will achieve a low-power and low-voltage implement what we explore. Furthermore, a novel OpAmp circuit is also addressed in this thesis. By utilizing the methods of feedforward and current-ratio, it realizes an OpAmp of high DC gain without capacitor compensation. Then, we utilize this novel OpAmp in the Dual-Path Pipelined analog-todigital converter what we mentioned above. To make matters even more exciting, by the particular structure of Dual-Path Pipelined analog-to-digital converter, we can design this OpAmp under unusual specifications to attain to an attractive lower power value. This complete circuit is designed with a 90nm CMOS technology. Power supply voltage is 1 V, input signal amplitude is 1.4 Vpp, resolution is 11-bit, the maximum sampling frequency is 200MHz. At Nyquist rate, the maximum power consumption is 5.3mW.