DiF-TESADT-based Transistor and the Vertical Porous Gas Sensor

• Main Authors: Lin, Hung-Cheng, 林洪正
• Other Authors: Zan, Hsiao-Wen
• Format: Others
• Language: en_US
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/16661727292184792369

碩士 === 國立交通大學 === 光電工程學系 === 99 === In recent years, flexible electronics Organic semiconductors have attracted a lot of attention due to the characteristics of low cost, light weight, high field-effect mobility, low threshold voltage, and low-temperature solution-processed. In this work, the study of diF-TESADT is discussed through the horizontal channel type OTFTs and the vertical channel type transistors. We fabricated diF-TESADT-based OTFTs through the deposition of diF-TESADT in low melting point solvent and the treatment of SAM. The devices had better mobility compared to the devices which needed to be fabricated by lithography. Besides, we demonstrated the SCLC diode in which the active layer was diF-TESADT blended with P3HT. The blending system had better crystallization ability, hence current density and mobility is better than pure P3HT diodes. Furthermore, we also apply the blending system to SCLT structure to study the electric characteristics of the devices. In the second part of this research, we demonstrate a novel porous gas sensor. The sensor can detect different gas molecules by exchanging the active layer material. P3HT and IGZO are what use to detect NH3 and NO respectively. In the research of P3HT porous diode, we discuss the effect of different carrier injection directions and thickness of P3HT layer. Bottom metal injection and 60nm P3HT layer will lead to the best response of NH3 sensing. Furthermore, we develop a structure that the surface area of P3HT which NH3 reacted is larger. In the research of IGZO NO sensor, we discuss the temperature which the device works at. Well performance and response is obtained by the novel porous gas sensor, and we look forward to apply the real-time and sensitive sensor in the bio-medical applications.