| Summary: | 碩士 === 國立交通大學 === 顯示科技研究所 === 99 === Amorphous InGaZnO4 (IGZO) thin film transistor (TFT) has drawn great attention because it has several merits such as high mobility, high transparency, low processing temperature, and potentially good uniformity. However, the threshold voltage (Vth) instability IGZO TFT can limits its applications in the circuits. Recently, the dual-gate IGZO TFT with two gates on the bottom and the top was proposed to have better device performance and better stability of Vth after voltage stress.
The threshold voltage of the TFT using the bottom-gate in its normal operation can be controlled by the top-gate. Based on this phenomenon, a new concept of using the top-gate to compensate threshold voltage variation is proposed. In this thesis, this new concept of Vth compensation is demonstrated experimentally in digital buffer and pixel circuits of active-matrix organic light-emitting diode (AMOLED).
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