| Summary: | 碩士 === 國立中央大學 === 電機工程研究所碩士在職專班 === 99 === In this thesis, we design a 3-D device simulator which includes the impact-ionization model to simulate the breakdown phenomenon of avalanche. First, we use Poisson’s equation, electron continuity equation and hole continuity equation to simulate 3-D device recombination rate and generation rate, and then we discuss the theorems, which include 3-D device simulator program flow chart and Band-Width property. In order to optimize efficiency in 3-D device simulation, we describe how to choose simulation parameters. After that, we discuss to prove 3-D device on 2-D stage. Finally, show the breakdown result of 3-D device simulator. After confirmation, we discuss the breakdown voltage effect on different diffusion radii.
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