Dependence of the dielectric property of Mg-doped ZrOx films upon Mg content

碩士 === 國立彰化師範大學 === 光電科技研究所 === 99 === This study investigates the effect of Mg content on the structural, optical, and electrical properties of sol-gel MgxZr(1-x)Oy films by x-ray diffraction, scanning electron microscopy, and x-ray photoelectron spectroscopy. Leakage currents through Au/MgxZr(1-x)...

Full description

Bibliographic Details
Main Author: 李聰明
Other Authors: 林祐仲
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/35071513285308389349
Description
Summary:碩士 === 國立彰化師範大學 === 光電科技研究所 === 99 === This study investigates the effect of Mg content on the structural, optical, and electrical properties of sol-gel MgxZr(1-x)Oy films by x-ray diffraction, scanning electron microscopy, and x-ray photoelectron spectroscopy. Leakage currents through Au/MgxZr(1-x)Oy/n-type Si structures were studied. The electrical conduction investigations suggest that the leakage behavior is governed by the Schottky emission. The relationship between the interfacial property and leakage conduction mechanism was also explored.